Title :
An AlGaAs/GaAs hetero source bipolar mode static induction transistor (HBSIT) with low forward voltage drop and high current gain
Author :
Nonaka, K. ; Ishikawa, Y. ; Yokoyama, S. ; Abe, M. ; Kamiyama, T.
Author_Institution :
Wako Res. Center, Honda R&D Co. Ltd., Saitama, Japan
fDate :
31 May-3 Jun 1994
Abstract :
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm2
Keywords :
gallium arsenide; 550 V; AlGaAs-GaAs; GaAs HBSIT; current gain; drain current density; forward voltage drop; hetero source bipolar mode static induction transistor; on-state characteristics; power devices; Current density; Doping; Electron mobility; Epitaxial layers; Fabrication; Gallium arsenide; Low voltage; Process design; Research and development; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583759
