• DocumentCode
    3451451
  • Title

    Determination of base and emitter delay time in advanced self-aligned bipolar technology

  • Author

    Chiu, Tzu-Yin ; Liu, Mark T Y ; Lee, Kwing F.

  • Author_Institution
    AT&T Bell Lab., Holmdel, NJ, USA
  • fYear
    1991
  • fDate
    9-10 Sep 1991
  • Firstpage
    158
  • Lastpage
    161
  • Abstract
    A method for experimentally determining the base and emitter delay time is described. It is based on direct monitoring of excess charge in the base and fT measurement as a function of collector current and base-collector voltage. The sum of the excess carrier mobilities is extracted directly from these measurements
  • Keywords
    bipolar integrated circuits; bipolar transistors; integrated circuit technology; time measurement; base delay time; base-collector voltage; collector current; delay time measurement; device physics; direct monitoring of excess charge; emitter delay time; excess carrier mobilities; fT measurement; self-aligned bipolar technology; Analytical models; Charge measurement; Current density; Current measurement; Delay effects; Doping; Electrical resistance measurement; Monitoring; Niobium; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-0103-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1991.160978
  • Filename
    160978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3451451