Optimization of light emitting diodes based on bipolar double-barrier resonant-tunneling structures

A bipolar double-barrier resonant-tunneling light emitting diode will have maximum emitted light intensity if (1) electrons and holes simultaneously resonant-tunnel into the quantum well, (2) the charge carriers are entirely trapped in the well as the only light source, and (3) the device operates at nearly zero-field condition. We have performed a theoretical modeling, by solving selfconsistently the Schrodinger equation and the Poisson equation, to optimize such resonant-tunneling light emitting diodes with respect to the geometric structures, the chemical compositions, and the doping profiles. All physical parameters are calculated from first principle, except the electron-hole recombination rate which is treated as an input parameter. We have also optimized the device performance with respect to the temperature stability, such that the profile of the electroluminescence spectrum is insensitive to the temperature. A completely automated computer code has been constructed for such theoretical modeling of light emitting diodes