Title :
Optoelectronic integration of quantum well infrared photodetector for array fabrication
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
This paper presents a novel approach to the fabrication of infrared imaging arrays. The approach involves the integration of quantum well infrared photodetectors with light emitting diodes using III-V semiconductor heterosystems
Keywords :
image sensors; infrared imaging; integrated optoelectronics; light emitting diodes; photodetectors; semiconductor quantum wells; III-V semiconductor heterosystems; LEDs; array fabrication; infrared imaging arrays; infrared photodetector; light emitting diodes; optoelectronic integration; quantum well IR photodetector; Bonding; Circuits; Detectors; Gallium arsenide; Infrared imaging; Light emitting diodes; Optical device fabrication; Photodetectors; Semiconductor materials; Sensor arrays;
Conference_Titel :
Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-7321-4
DOI :
10.1109/PCMDLS.1995.494970
