Speed advantage of deep sub-micron BiNMOS gate over CMOS at liquid nitrogen temperature

Author

Satake, Hideki ; Hamasaki, Toshihiko ; Maeda, Takeo

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

9-10 Sep 1991

Firstpage

162

Lastpage

165

Abstract

A high switching performance at liquid-nitrogen temperature of deep submicron BiNMOS (cryo-BNiNMOS) is demonstrated with Si HOMO base bipolar junction transistors (BJTs). The high cut-off frequency (10.3 GHz), sufficient current gain (25), and low base resistance (2.7 kΩ/□) for cryo-BiNMOS were simultaneously obtained even in Si HOMO base BJTs by the heavily doped base AND collector. Using these measured device data, it has been clarified by SPICE simulation that in the switching performance the cryo-BiNMOS gate has an advantage over cryo-CMOS, even when the power supply voltage is below 2.5 V

Keywords

BIMOS integrated circuits; CMOS integrated circuits; integrated logic circuits; 10.3 GHz; 2.5 V; 77 to 80 K; BiNMOS gate; SPICE simulation; Si HOMO base BJTs; base resistance; bipolar junction transistors; cryo-BiNMOS gate; cryo-CMOS; current gain; cut-off frequency; deep submicron BiNMOS; device physics; heavily doped base; power supply voltage; speed advantage; switching performance; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Ion implantation; Nitrogen; Power supplies; Temperature; Testing; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160979

Filename

160979