Title :
Speed advantage of deep sub-micron BiNMOS gate over CMOS at liquid nitrogen temperature
Author :
Satake, Hideki ; Hamasaki, Toshihiko ; Maeda, Takeo
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A high switching performance at liquid-nitrogen temperature of deep submicron BiNMOS (cryo-BNiNMOS) is demonstrated with Si HOMO base bipolar junction transistors (BJTs). The high cut-off frequency (10.3 GHz), sufficient current gain (25), and low base resistance (2.7 kΩ/□) for cryo-BiNMOS were simultaneously obtained even in Si HOMO base BJTs by the heavily doped base AND collector. Using these measured device data, it has been clarified by SPICE simulation that in the switching performance the cryo-BiNMOS gate has an advantage over cryo-CMOS, even when the power supply voltage is below 2.5 V
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; integrated logic circuits; 10.3 GHz; 2.5 V; 77 to 80 K; BiNMOS gate; SPICE simulation; Si HOMO base BJTs; base resistance; bipolar junction transistors; cryo-BiNMOS gate; cryo-CMOS; current gain; cut-off frequency; deep submicron BiNMOS; device physics; heavily doped base; power supply voltage; speed advantage; switching performance; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Ion implantation; Nitrogen; Power supplies; Temperature; Testing; Ultra large scale integration; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160979
