• DocumentCode
    3451759
  • Title

    Nano devices for the future IT

  • Author

    Fukuma, M.

  • fYear
    2004
  • fDate
    26-29 Oct. 2004
  • Firstpage
    2
  • Lastpage
    2
  • Abstract
    Summary form only given. Up to now, silicon LSls have been developed based on?? the so called scaling principle, and established huge market in the IT business. However, due to physical and practical limitations, introduction of new architectures and new materials, i.e. the post scaling technology, is a must for the further progress in future LSI performance, in addition to the device miniaturization.
  • Keywords
    CMOS technology; FETs; High K dielectric materials; High-K gate dielectrics; Large scale integration; Nanostructured materials; National electric code; Quantum computing; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-99024720-5
  • Type

    conf

  • DOI
    10.1109/IMNC.2004.245690
  • Filename
    1459440