DocumentCode :
3451759
Title :
Nano devices for the future IT
Author :
Fukuma, M.
fYear :
2004
fDate :
26-29 Oct. 2004
Firstpage :
2
Lastpage :
2
Abstract :
Summary form only given. Up to now, silicon LSls have been developed based on?? the so called scaling principle, and established huge market in the IT business. However, due to physical and practical limitations, introduction of new architectures and new materials, i.e. the post scaling technology, is a must for the further progress in future LSI performance, in addition to the device miniaturization.
Keywords :
CMOS technology; FETs; High K dielectric materials; High-K gate dielectrics; Large scale integration; Nanostructured materials; National electric code; Quantum computing; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245690
Filename :
1459440
Link To Document :
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