Title :
Submicron BICMOS compatible high voltage MOS transistors
Author :
Li, Yong Q. ; Salama, C.A.T. ; Seufert, Mike ; King, Mike
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
31 May-3 Jun 1994
Abstract :
The design and implementation of high-voltage MOS transistors fully compatible with 0.8 μm BICMOS technology is considered in this paper. Two-dimensional simulations were used in the design of the structures. Three different structures are presented. The results indicate that it is possible to implement MOS devices with a pitch of 8 μm, breakdown voltage of the order of 20 to 50 V and specific on-resistance of the order of 0.8 to 10 mΩ cm2 by minor layout modifications and without changes in the process itself
Keywords :
BiCMOS analogue integrated circuits; 0.8 micron; 20 to 80 V; VLSI; breakdown voltage; high voltage MOS transistors; layout modifications; power ICs; specific on-resistance; submicron BiCMOS; two-dimensional simulations; BiCMOS integrated circuits; Breakdown voltage; Computational modeling; Doping profiles; Electric breakdown; Ice; Implants; MOS devices; MOSFETs; Telecommunications;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583776
