DocumentCode
3451786
Title
Submicron BICMOS compatible high voltage MOS transistors
Author
Li, Yong Q. ; Salama, C.A.T. ; Seufert, Mike ; King, Mike
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
355
Lastpage
358
Abstract
The design and implementation of high-voltage MOS transistors fully compatible with 0.8 μm BICMOS technology is considered in this paper. Two-dimensional simulations were used in the design of the structures. Three different structures are presented. The results indicate that it is possible to implement MOS devices with a pitch of 8 μm, breakdown voltage of the order of 20 to 50 V and specific on-resistance of the order of 0.8 to 10 mΩ cm2 by minor layout modifications and without changes in the process itself
Keywords
BiCMOS analogue integrated circuits; 0.8 micron; 20 to 80 V; VLSI; breakdown voltage; high voltage MOS transistors; layout modifications; power ICs; specific on-resistance; submicron BiCMOS; two-dimensional simulations; BiCMOS integrated circuits; Breakdown voltage; Computational modeling; Doping profiles; Electric breakdown; Ice; Implants; MOS devices; MOSFETs; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583776
Filename
583776
Link To Document