DocumentCode :
3451951
Title :
A 70-V, 90-mΩ mm2, high-speed double-layer gate UMOSFET realized by selective CVD tungsten
Author :
Matsumoto, Satoshi ; Yoshino, Hideo ; Ishii, Hiromu ; Ohno, Terukazu
Author_Institution :
NTT Interdisciplinary Res. Lab., Tokyo, Japan
fYear :
1994
fDate :
31 May-3 Jun 1994
Firstpage :
365
Lastpage :
369
Abstract :
Selective CVD is used to develop a low on-resistance, high-speed UMOSFET with a new double-layer gate electrode made of tungsten. The experimental UMOSFET has an active device area of 1 mm2, an on-resistance of 90 mΩ and a breakdown voltage of 70 V. Its corner frequency (-3 dB)is extended to 2.14 MHz. This value is 1.8 times higher than that of a conventional poly-Si-gate UMOSFET
Keywords :
power MOSFET; 2.14 MHz; 70 V; 90 mohm; W; active device area; breakdown voltage; corner frequency; double-layer gate electrode; high-speed UMOSFET; on-resistance; selective CVD tungsten; Artificial intelligence; Chromium; Electrodes; Etching; Fabrication; Frequency; Laboratories; Large scale integration; MOSFETs; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
ISSN :
1063-6854
Print_ISBN :
0-7803-1494-8
Type :
conf
DOI :
10.1109/ISPSD.1994.583785
Filename :
583785
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3451951
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