• DocumentCode
    3451951
  • Title

    A 70-V, 90-mΩ mm2, high-speed double-layer gate UMOSFET realized by selective CVD tungsten

  • Author

    Matsumoto, Satoshi ; Yoshino, Hideo ; Ishii, Hiromu ; Ohno, Terukazu

  • Author_Institution
    NTT Interdisciplinary Res. Lab., Tokyo, Japan
  • fYear
    1994
  • fDate
    31 May-3 Jun 1994
  • Firstpage
    365
  • Lastpage
    369
  • Abstract
    Selective CVD is used to develop a low on-resistance, high-speed UMOSFET with a new double-layer gate electrode made of tungsten. The experimental UMOSFET has an active device area of 1 mm2, an on-resistance of 90 mΩ and a breakdown voltage of 70 V. Its corner frequency (-3 dB)is extended to 2.14 MHz. This value is 1.8 times higher than that of a conventional poly-Si-gate UMOSFET
  • Keywords
    power MOSFET; 2.14 MHz; 70 V; 90 mohm; W; active device area; breakdown voltage; corner frequency; double-layer gate electrode; high-speed UMOSFET; on-resistance; selective CVD tungsten; Artificial intelligence; Chromium; Electrodes; Etching; Fabrication; Frequency; Laboratories; Large scale integration; MOSFETs; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
  • Conference_Location
    Davos
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-1494-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.1994.583785
  • Filename
    583785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3451951