Title :
A new edge structure for 2 KVolt power IC operation
Author :
Zambrano, R. ; Cacciola, G. ; Leonardi, S.
Author_Institution :
Res. Center, SGS-Thomson Microelectron., Catania, Italy
fDate :
31 May-3 Jun 1994
Abstract :
A new edge structure for 2 KVolt Power IC operation is introduced which features low concentration rings defined on two epilayers to increase the final junction depth. Computer simulations performed to assess the structure viability have been followed by experiments varying the implant dose. Breakdown voltages up to 2000 and 1200 Volts have been measured on UHV and VHV wafers for a wide range of implanted doses demonstrating good process latitude. Production devices featuring the new structure have been fabricated, preliminary results on an off-line SMPS are presented
Keywords :
power integrated circuits; 2 kV; BiCMOS technology; UHV wafers; VHV wafers; breakdown voltages; computer simulations; edge structure; epilayers; implant dose; junction depth; low concentration rings; off-line SMPS; power IC operation; process latitude; production device fabrication; Bridge circuits; Computer simulation; Displays; Implants; Isolation technology; Microelectronics; Power integrated circuits; Production; Switched-mode power supply; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583789
