Title :
Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs
Author :
Duong, Tam H. ; Hefner, Allen R. ; Berning, David W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA
Abstract :
Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV
Keywords :
power MOSFET; power engineering computing; semiconductor device models; silicon compounds; 1 kV; 10 kV; 2 kV; 400 V; 55 V; IGBT model; IMPACT; SiC; automated parameter extraction software; device structures; power MOSFET; power device library; voltage blocking; Capacitance; Data mining; Insulated gate bipolar transistors; MOSFETs; Parameter extraction; Power system modeling; Silicon carbide; Software tools; Threshold voltage; Transconductance;
Conference_Titel :
Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on
Conference_Location :
Troy, NY
Print_ISBN :
0-7803-9724-X
Electronic_ISBN :
1093-5142
DOI :
10.1109/COMPEL.2006.305676
