Title :
SPICE Model of SiC JFETs for Circuit Simulations
Author :
Wang, Yi ; Cass, Callaway J. ; Chow, T. Paul ; Wang, Fred ; Boroyevich, Dushan
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY
Abstract :
This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results
Keywords :
SPICE; junction gate field effect transistors; power semiconductor switches; semiconductor device models; silicon compounds; 1200 V; 5 A; 600 V; JFET; SPICE model; SiC; circuit simulations; dynamic characterizations; high voltage transistors; parameter extraction; static characterizations; switching behavior; temperature dependent characterization; Circuit simulation; JFETs; MOSFET circuits; Power electronics; Power system modeling; SPICE; Silicon carbide; Switches; Temperature dependence; USA Councils;
Conference_Titel :
Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on
Conference_Location :
Troy, NY
Print_ISBN :
0-7803-9724-X
Electronic_ISBN :
1093-5142
DOI :
10.1109/COMPEL.2006.305677
