Title :
Thin SOI IGBT leakage current and a new device structure for high temperature operation
Author :
Matsudai, Tomoko ; Yamaguchi, Yoshihiro ; Yasuhara, Norio ; Nakagawa, Akio ; Mochizuki, Hiroshi
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
31 May-3 Jun 1994
Abstract :
This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200°C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation
Keywords :
silicon-on-insulator; 200 C; LIGBTs; SOI IGBT; Si; device structure; forward voltage-drop; high temperature operation; lateral IGBT; leakage current; onstate resistance; power IC application; switching speed; temperature dependence; thin SOI device; Automotive engineering; CMOS technology; Diodes; Insulated gate bipolar transistors; Integrated circuit technology; Leakage current; MOSFETs; Motor drives; Temperature dependence; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583804
