3452326

Substrate orientation dependence of first- and second-oxide-layer growth kinetics: comparison between Si[001]2 x 1 and Si[111]7 x 7 surfaces

2004

Oct. 27-29, 2004

44

45

Diffraction; Electron beams; Inorganic materials; Kinetic theory; MOSFET circuits; Optical reflection; Oxidation; Spectroscopy; Surface morphology; Temperature dependence;

English

ieee

Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International

4-99024720-5

conf

10.1109/IMNC.2004.245713

1459463