DocumentCode
3452344
Title
Subpicosecond carrier lifetime in beryllium-doped lnGaAsP grown by He-plasma-assisted molecular beam epitaxy
Author
Li Qian ; Benjamin, Seldon D. ; Smith, P.W.E. ; Robinson, B.J. ; Thompson, Dennis A.
Author_Institution
Department of Electrical & Computer Engineering, University of Toronto
Volume
11
fYear
1997
fDate
18-23 May 1997
Firstpage
223
Lastpage
223
Keywords
Absorption; Charge carrier lifetime; Doping; Integrated optics; Molecular beam epitaxial growth; Optical devices; Optical materials; Optical pumping; Optical scattering; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-4125-2
Type
conf
DOI
10.1109/CLEO.1997.603044
Filename
603044
Link To Document