DocumentCode :
3452344
Title :
Subpicosecond carrier lifetime in beryllium-doped lnGaAsP grown by He-plasma-assisted molecular beam epitaxy
Author :
Li Qian ; Benjamin, Seldon D. ; Smith, P.W.E. ; Robinson, B.J. ; Thompson, Dennis A.
Author_Institution :
Department of Electrical & Computer Engineering, University of Toronto
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
223
Lastpage :
223
Keywords :
Absorption; Charge carrier lifetime; Doping; Integrated optics; Molecular beam epitaxial growth; Optical devices; Optical materials; Optical pumping; Optical scattering; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.603044
Filename :
603044
Link To Document :
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