DocumentCode
3452347
Title
Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals
Author
Yokoi, H. ; Mizumoto, T. ; Shimizu, Maiko ; Waniishi, T. ; Futakuchi, N. ; Kaida, N. ; Nakano, Y.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
4
fYear
1999
fDate
Aug. 30 1999-Sept. 3 1999
Firstpage
1206
Abstract
GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O/sub 2/ plasma activation process. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.
Keywords
III-V semiconductors; contact angle; gallium compounds; indium compounds; plasma materials processing; semiconductor-insulator boundaries; wafer bonding; GaInAsP; GaInAsP surfaces; O/sub 2/ plasma activation process; contact angle measurement; garnet crystals; hydrophilic surface; hydrophilicity; semiconductor; wafer direct bonding; Diode lasers; Gain measurement; Garnets; Goniometers; Indium phosphide; Optical surface waves; Plasma applications; Plasma measurements; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location
Seoul, South Korea
Print_ISBN
0-7803-5661-6
Type
conf
DOI
10.1109/CLEOPR.1999.814737
Filename
814737
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