600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance

We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V_CE(sat)=1.4 V, t_f=230 ns @ 200 A/cm² ) and much better endurance property (dI_c/dt≈2500 A/(s·cm²)) for latch-up than planar IGBTs. Trench IGBTs also showed a higher breakdown voltage(BV_CES) than planar IGBTs. We have confirmed that the trench IGBT realizes the ideal structure, “PIN diode+MOS gate”, which was proposed at the start of the IGBT development. The trench IGBT would be expected to be a superior high voltage device, especially due to its endurance property for latch-up operation