Title :
Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits
Author :
Rodwell, Mark ; Griffith, Z. ; Parthasarathy, N. ; Lind, E. ; Sheldon, C. ; Bank, S.R. ; Singisetti, U. ; Urteaga, M. ; Shinohara, K. ; Pierson, R. ; Rowell, P.
Author_Institution :
ECE Department, University of California, Santa Barbara, 93106, USA. phone: 805-893-3244, fax 805-893-3262, rodwell@ece.ucsb.edu
Abstract :
Here we consider the prospects for continued improvement in InP HBTs, specifically the challenges faced in a further doubling of transistor and IC bandwidth. Our objective is an IC technology supporting 300 GHz digital clock rates, -600 GHz reactively-tuned amplifiers, and balanced cutoff frequencies in the 700-1000 GHz range. Such ICs would permit monolithic transceivers for 300 GHz and 600 GHz imaging systems, -250 GHz high-rate communications radios, chip sets for 300 Gb/s optical data transmission, and very high-resolution microwave mixed-signal ICs.
Keywords :
Bandwidth; Bipolar transistors; Clocks; Conductivity; Digital circuits; Digital integrated circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Thermal resistance;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305093
