DocumentCode :
3452466
Title :
Intensity and frequency noise in semiconductor lasers
Author :
Vahala, Kerry J.
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
fYear :
1991
fDate :
29-31 May 1991
Firstpage :
539
Abstract :
Summary form only given. The author reviewed the physics governing field fluctuations in semiconductor lasers, discussed the performance levels that have been achieved in state-of-the-art devices, and tried to forecast future performance levels and novel structures/materials that may be used in these devices. Commercial semiconductor lasers are nearly ideal in terms of their physical properties. Their intensity noise spectra and short-term frequency stability are governed almost exclusively by quantum mechanical effects, and these, in turn, determine system performance levels
Keywords :
electron device noise; laser frequency stability; semiconductor junction lasers; device physics; field fluctuations; frequency noise; intensity noise; intensity noise spectra; operation; quantum mechanical effects; semiconductor lasers; short-term frequency stability; Fluctuations; Frequency; Laser noise; Laser theory; Noise level; Optical materials; Physics; Semiconductor device noise; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
Conference_Location :
Los Angeles, CA
Print_ISBN :
0-87942-658-6
Type :
conf
DOI :
10.1109/FREQ.1991.145947
Filename :
145947
Link To Document :
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