Title :
A 1.5 GHz, 35-W Si-MOSFET with an internal matching circuit
Author :
Yanokura, Eiji ; Seki, Tatsuhiro ; Takei, Ichiro ; Maruyama, Yasuo ; Fujita, Yuzuru ; Katsueda, Mineo ; Yoshida, Isao ; Ohnishi, Masami ; Sekine, Kenji
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Gunma, Japan
fDate :
31 May-3 Jun 1994
Abstract :
We have developed a highly efficient Si power MOSFET that can operate at 1.5 GHz. This device has a double-ion-implanted layer in an offset region which achieves high drain current density as well as high breakdown voltage. It also has a 0.8-μm Mo gate structure for high-frequency operation. In addition, we have successfully designed an internal matching circuit that overcomes the impedance-lowering problem of high-power MOSFETs operated at over 1 GHz. As a result, we obtain an output power of 35 W and a power-added efficiency of 50%, with excellent linearity of power gain
Keywords :
silicon; 0.8 micron; 1.5 GHz; 35 W; 50 percent; Mo; Mo gate structure; Si; UHF operation; double-ion-implanted layer; high breakdown voltage; high drain current density; internal matching circuit; offset region; power MOSFET; power gain linearity; Current density; Frequency; Impedance; MOSFET circuits; Mobile communication; Power MOSFET; Power amplifiers; Power generation; Power system relaying; Power system stability;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583817
