A 1.5 GHz, 35-W Si-MOSFET with an internal matching circuit

Author

Yanokura, Eiji ; Seki, Tatsuhiro ; Takei, Ichiro ; Maruyama, Yasuo ; Fujita, Yuzuru ; Katsueda, Mineo ; Yoshida, Isao ; Ohnishi, Masami ; Sekine, Kenji

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Gunma, Japan

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

425

Lastpage

429

Abstract

We have developed a highly efficient Si power MOSFET that can operate at 1.5 GHz. This device has a double-ion-implanted layer in an offset region which achieves high drain current density as well as high breakdown voltage. It also has a 0.8-μm Mo gate structure for high-frequency operation. In addition, we have successfully designed an internal matching circuit that overcomes the impedance-lowering problem of high-power MOSFETs operated at over 1 GHz. As a result, we obtain an output power of 35 W and a power-added efficiency of 50%, with excellent linearity of power gain

Keywords

silicon; 0.8 micron; 1.5 GHz; 35 W; 50 percent; Mo; Mo gate structure; Si; UHF operation; double-ion-implanted layer; high breakdown voltage; high drain current density; internal matching circuit; offset region; power MOSFET; power gain linearity; Current density; Frequency; Impedance; MOSFET circuits; Mobile communication; Power MOSFET; Power amplifiers; Power generation; Power system relaying; Power system stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583817

Filename

583817