Title :
A fast-transform basis with hysteretic features
Author_Institution :
Dept. of Math. & Stat., Univ. of Saskatchewan, Saskatoon, SK, Canada
Abstract :
Hysteretic distortion is the common feature of signals generated by magnetic quantum- and nano-systems. In light of recent advances in nano-electronics, particularly the assent of memristance, it is expected that hysteretic features will become the trademark of next-generation electronics. Consequently, signal processing tasks, such as compression or denoising, will benefit from the use of bases which adapt to the hysteretic distortion. In this paper I describe a basis that consists of periodic functions with an inherent hysteretic feature. These functions originate from a certain nonlinear eigenvalue problem which, it is demonstrated here, relates to oscillators with memristance. The discussion of the specific basis is set in the discrete framework. It is demonstrated that a signal may be represented in the said basis via a fast-transform. In other words, an algorithm is displayed, which allows the basis coefficients of an N-dimensional signal to be computed in O(N log N) arithmetical operations. Remarkably, the crucial estimate for the algorithm´s efficiency originates from the canon of Analytic Number Theory.
Keywords :
eigenvalues and eigenfunctions; hysteresis; memristors; nanoelectronics; oscillators; signal processing; N-dimensional signal; O(N log N) arithmetical operations; analytic number theory; discrete framework; fast-transform basis; hysteretic features; inherent hysteretic feature; memristance; nonlinear eigenvalue problem; oscillators; Eigenvalues and eigenfunctions; Equations; Magnetic hysteresis; Mathematical model; Memristors; Nonlinear distortion; Oscillators; eigenbasis; fast transforms; memristance circuit signal; memristance oscillator; nonlinear eigenvalue problems; signal with hysteretic features;
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-9788-1
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2011.6030449