Title :
Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region
Author :
Yamatoya, T. ; Mori, S. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
High power and broadband superluminescent diodes (SLDs) would be useful for various optical sensing applications and for spectrum-sliced multi-wavelength light sources. We proposed and developed SLDs with a tapered active region. We present the design and fabrication of GaInAsP-InP strained QW SLDs with an optimized taper structure. Also, broad-band emission has been obtained by using chirped QW structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical design techniques; optical fabrication; superluminescent diodes; GaInAsP-InP; GaInAsP-InP strained QW SLDs; broad-band emissio; chirped QW structures; high power broad-band GaInAsP-InP strained quantum well superluminescent diodes; optical design; optical fabrication; optical sensing applications; optimized taper structure; spectrum-sliced multi-wavelength light source; tapered active region; Chirp; Fabrication; Indium phosphide; Laboratories; Large-scale systems; Light sources; Optical sensors; Power generation; Pulse measurements; Superluminescent diodes;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814748
