3452651

Elemental devices for monolithic optoelectronic integrated circuits on lattice-matched Si/III-V-N/Si structure

Furukawa, Y. ; Yonezu, H. ; Wakahara, A. ; Morisaki, Y. ; Moon, S.Y. ; Ishiji, S. ; Ohtani, M.

Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, Aichi 441-8580, JAPAN. Phone: +81-532-44-6746, Fax: +81-532-44-6757, Email: furukawa@eee.tut.ac.jp

2006

26-28 June 2006

27

28

DH-HEMTs; Integrated circuit technology; Light emitting diodes; Luminescence; MOSFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Moon; Optoelectronic devices; Substrates;

English

ieee

Device Research Conference, 2006 64th

State College, PA, USA

1548-3770

0-7803-9748-7

conf

10.1109/DRC.2006.305103

4097520