DocumentCode :
3452675
Title :
Low-voltage vibration sensor in standard CMOS process
Author :
Peng, Benxian ; Yu, Ting ; Yu, Fengqi
Author_Institution :
Dept. of Integrated Electron., Shenzhen Inst. of Adv. Technol., Shenzhen
fYear :
2007
fDate :
15-18 Dec. 2007
Firstpage :
1512
Lastpage :
1516
Abstract :
A novel micro-vibration sensor with MOS structure is proposed and two solutions to reduce high threshold voltage are developed. The proposed sensor exhibits prefect linearity up to 99.98% and high resolution of 0.19 muA/g. The vibration sensor can provide various potential applications, such as civil structural health monitoring, biomedical applications, low power consumption wireless sensor networks. The Sensor is designed with commercial standard 0.25 mum CMOS process followed by only one maskless post-CMOS step. Gas rarefaction effect in ultra-thin air gap is also discussed in this paper.
Keywords :
CMOS integrated circuits; microsensors; vibration measurement; gas rarefaction effect; low-voltage vibration sensor; micro-vibration sensor; size 0.25 mum; standard CMOS process; ultra-thin air gap; Biosensors; CMOS process; CMOS technology; Capacitance; Damping; Electromechanical sensors; Etching; Micromechanical devices; Threshold voltage; Vibrations; CMOS technology; air damping; vibration sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Robotics and Biomimetics, 2007. ROBIO 2007. IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1761-2
Electronic_ISBN :
978-1-4244-1758-2
Type :
conf
DOI :
10.1109/ROBIO.2007.4522388
Filename :
4522388
Link To Document :
بازگشت