An improved de-embedding technique for on-wafer high-frequency characterization

Author

Koolen, M.C.A.M. ; Geelen, J.A.M. ; Versleijen, M.P.J.G.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1991

fDate

9-10 Sep 1991

Firstpage

188

Lastpage

191

Abstract

An improved correction procedure for on-wafer S-parameter measurements has been developed and implemented. The method takes the effects of series parasitics into account in a simple, straightforward way. The improved performance of the method with respect to the usual method-which accounts for parallel parasitics only-especially at frequencies exceeding a few GHz is demonstrated. Its performance is compared with that of more complex methods. f_T determined from Y-parameters is not affected by this correction method, but the individual Y-parameters are. Therefore, for transistor characterization using measured Y-parameters the proposed correction should be adopted

Keywords

S-parameters; bipolar transistors; microwave measurement; solid-state microwave devices; HF characterisation; Y-parameters; correction method; correction procedure; de-embedding technique; on-wafer S-parameter measurements; on-wafer high-frequency characterization; series parasitics; transistor characterization; Calibration; Equivalent circuits; Frequency measurement; Impedance measurement; Integrated circuit interconnections; Laboratories; Microwave measurements; Microwave transistors; Performance evaluation; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160985

Filename

160985