Title :
Formation of a SiO2/Si3N4/SiO2 electret on a silicon substrate
Author :
Crain, Mark ; McNamara, Shamus ; Keynton, Robert
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Louisville, Louisville, KY, USA
Abstract :
A new technique is presented for creating a thermoelectret from a PECVD multilayer film of SiO2/Si3N4/SiO2 using a direct contact cathode. The materials used have the advantage of being compatible with standard microfabrication processes. The electret film and activation process can be completed with equipment that is already available in many facilities. Effective surface voltages (ESV) of -236.2 V are possible and the lifetime coefficient for decay shows that it should operate for decades in standard packaged environments below 125°C.
Keywords :
cathodes; dielectric materials; electrets; elemental semiconductors; microfabrication; multilayers; plasma CVD; semiconductor thin films; silicon; silicon compounds; PECVD multilayer film; Si; SiO2-Si3N4-SiO2; activation process; decay lifetime coefficient; direct contact cathode; effective surface voltages; electret film; microfabrication process; silicon substrate; thermoelectret; voltage -236.2 V; Electrets; Films; Nonhomogeneous media; Silicon; Surface treatment; Temperature; Temperature measurement; NVSM; PECVD electret; SONOS; Thermoelectret;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6626721
