Title :
Mobility in Back-Gate/Double-Gate Undoped Thin Silicon Channel Transistors
Author :
Kumar, Ajit ; Mohta, Setu ; Avci, Uygar E. ; Kumar, Ajit ; Tiwari, Sunita
Author_Institution :
School of Electrical and Computer Engineering, Cornell University. Ithaca, NY. Email: ak226@cornell.edu
Keywords :
Bonding; Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Clouds; Doping; Electrons; Geometry; Silicon; Threshold voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305107
