DocumentCode :
3452748
Title :
FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate
Author :
Xiong, Weize ; Shin, Kyoungsub ; Cleavelin, C. Rinn ; Schulz, Thomas ; Schruefer, Klaus ; Cayrefourcq, I. ; Kennard, M. ; Mazure, C. ; Patruno, Paul ; Liu, Tsu-Jae King
Author_Institution :
Texas Instruments Inc., SiTD, 13121 TI Boulevard, Dallas, TX USA
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
39
Lastpage :
40
Keywords :
Capacitive sensors; Degradation; Electrodes; Electron mobility; FinFETs; MOS devices; Metal-insulator structures; Silicon on insulator technology; Strain measurement; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305109
Filename :
4097526
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3452748
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