Title :
Oxygen precipitation control during bipolar IC processes
Author :
Veron, A. ; Ohanesian, M.
Author_Institution :
Baneasa SA, Bucharest, Romania
Abstract :
The paper presents an adequate procedure for controlling the oxygen precipitation kinetics during the bipolar IC processing sequence. The nucleation of oxide precipitates at an early stage of processing is optimally designed based on numerical simulations of oxide precipitate evolution during the processing sequence. A precipitation test for proper screening of silicon crystals received from different suppliers is also proposed
Keywords :
bipolar integrated circuits; getters; integrated circuit technology; precipitation; process control; semiconductor process modelling; O precipitation control; O precipitation kinetics; Si crystal screening; Si:O; bipolar IC processes; internal gettering; numerical simulations; optimal design; oxide precipitate nucleation; precipitation test; Annealing; Bipolar integrated circuits; Epitaxial growth; Gettering; History; Numerical simulation; Oxygen; Silicon; Temperature dependence; Testing;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495032
