Title :
GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics
Author :
Koester, S.J. ; Kiewra, E.W. ; Sun, Yanning ; Neumayer, D.A. ; Ott, J.A. ; Sadana, D.K. ; Webb, D.J. ; Fompeyrine, J. ; Locquet, J.-P. ; Sousa, M. ; Germann, R.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. phone: (914)945-2189, fax: (914)945-2141, email: skoester@us.ibm.com
Keywords :
Annealing; Capacitance-voltage characteristics; Dielectrics; Electrodes; Frequency; Gallium arsenide; Hafnium oxide; MOS capacitors; MOSFETs; Thermal stability;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305111
