DocumentCode :
3452810
Title :
Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
Author :
Ok, Injo ; Kim, H. ; Zhang, M. ; Lee, T. ; Zhu, F. ; Thareja, G. ; Yu, L. ; Koveshnikov, S. ; Tsai, W. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Lee, Jack C.
Author_Institution :
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758. Phone: (512)471-1627, Fax: (512)471- 5625, email: okinjo@mail.utexas.edu
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
45
Lastpage :
46
Keywords :
Atherosclerosis; Electric variables; Frequency; Gallium arsenide; Hafnium oxide; MOSFET circuits; Passivation; Personal digital assistants; Silicon; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305112
Filename :
4097529
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3452810
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