Full-chip implementation of IDEALsmile on 90nm node devices with ArF lithography

Summary form only given. According to sizes dictated by ITRS roadmap, contact holes are one of the most challenging features to be printed in the semiconductor manufacturing process. To overcome this issue Canon, in 2002, introduced a new technology, entitled lDEALSmile1i2 (Innovative Double Effective source Aided Lithography with Single Mask Implemented Lithographic Enhancement), that was proven to be able to define contacts with high resolution and sufficiently large through pitch?? process window using a binary mask, cheap and simple to be manufactured, modified illumination and single exposure, without any negative impact on throughput and no increase of cost of ownership, The technology was further improved in 2003 with the introduction of Enhanced-IDEALSmile4 that, in certain conditions, allows achieving even higher contrast, and increased DOF thanks to three beam interference obtained with special shifted arrangement of dummy patterns without modifying optimized illumination shape.