Title :
Design of double diffused structure power ICs
Author :
Sanqing, Liu ; Guangjun, Cao ; Jianhua, Ying ; Yanzhong, Xu ; Zuxin, Qin
Author_Institution :
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Butt Joint Lateral Diffusion (BJLD) NMOS unit structure derived from conventional VDMOS structure is described. With compatible design of both NMOS and VDMOS, a new power IC consists of a HV VDMOS output device and LV functional circuit units is proposed. Layout design of such a power IC is discussed
Keywords :
MOS integrated circuits; electric breakdown; integrated circuit layout; power integrated circuits; HV VDMOS output device; LV functional circuit units; NMOS unit structure; butt joint lateral diffusion structure; double diffused structure; layout design; power ICs; Doping; Electrodes; Epitaxial layers; Logic devices; MOS devices; Manufacturing; Power engineering and energy; Power integrated circuits; Solid state circuits; Voltage;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495037
