DocumentCode
3452851
Title
Very high aspect ratio through silicon vias (TSVs) using wire bonding
Author
Schroder, Stephan ; Fischer, Andreas C. ; Stemme, Goran ; Niklaus, Frank
Author_Institution
KTH R. Inst. of Technol., Stockholm, Sweden
fYear
2013
fDate
16-20 June 2013
Firstpage
167
Lastpage
170
Abstract
This paper reports a fabrication approach for very high aspect ratio through silicon vias (TSVs). The metal filling of the through via holes is implemented by adapting standard wire bonding technology. TSVs with a diameter of 30 μm and aspect ratios between 10:1 and 20:1 have been fabricated. Basic electrical characterization and optical inspection have been conducted to verify the resistance and integrity of the metal and insulator filling of the TSV.
Keywords
integrated circuit interconnections; integrated circuit metallisation; lead bonding; three-dimensional integrated circuits; electrical characterization; metal filling; optical inspection; size 30 mum; through silicon vias; wire bonding; Bonding; Filling; Metals; Silicon; Substrates; Through-silicon vias; Wires; Metal through silicon vias; TSVs; high aspect ratio; wire bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location
Barcelona
Type
conf
DOI
10.1109/Transducers.2013.6626728
Filename
6626728
Link To Document