Title :
Characterization through cathodoluminescence and thermoluminescence of α-SiO2 single crystals before and after γ-radiation treatments : contribution to the evaluation of the influence of defects on the frequency-shifts
Author :
Guibert, P. ; Chapoulie, R. ; Dubernet, S. ; Largeteau, A. ; Demazeau, G.
Author_Institution :
Univ. Michel de Montaigne-Bordeaux 3, Pessac
fDate :
May 29 2007-June 1 2007
Abstract :
The fiability and performances of quartz resonators are -in particular-dependent on point defects including chemical impurities either in substitution for the Si sites or in interstitial positions in the α-SiO2 lattice. Such a research work is devoted to cathodoluminescence (CL) and thermoluminescence (TL) studies, before and after γ-radiation treatments, on different single crystals of α-SiO2 [one being natural and four from hydrothermal processes]. Cathodoluminescence and thermoluminescence were selected as characterization techniques due to their complementarities concerning in particular their abilities to the detection of point defects (mainly impurities and ion vacancies) by their luminescence emission.
Keywords :
γ-ray effects; cathodoluminescence; crystal defects; crystal resonators; interstitials; quartz; silicon compounds; thermoluminescence; vacancies (crystal); α-SiO2 single crystal lattice; γ-radiation treatment; SiO2; cathodoluminescence; chemical impurities; crystal defects evaluation; interstitial positions; ion vacancies; luminescence emission; point defects detection; quartz resonator performance; thermoluminescence; Chemicals; Crystalline materials; Crystals; Excitons; Frequency; Heating; Impurities; Luminescence; Optical materials; Optical resonators;
Conference_Titel :
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location :
Geneva
Print_ISBN :
978-1-4244-0646-3
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2007.4319055
