New RF-probe pad and interconnection model and parameter extraction technique for HBT equivalent circuit

Author

Lee, Seongheam ; Gopinath, Anand

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

192

Lastpage

195

Abstract

A novel equivalent circuit model of RF probe pads and interconnections for S-parameter measurements, together with a novel parameter extraction method based on the S-parameter measurements of HBTs (heterojunction bipolar transistors) in the cutoff mode, is presented. This circuit and the extraction technique give very accurate and self-consistent results. The extracted equivalent circuit of the device and probe-pattern parasitics using the technique show excellent agreement with the measured S-parameters

Keywords

S-parameters; equivalent circuits; heterojunction bipolar transistors; microwave measurement; semiconductor device models; solid-state microwave devices; HBT equivalent circuit; HF characterisation; RF-probe pad; S-parameter measurements; cutoff mode; equivalent circuit extraction; equivalent circuit model; heterojunction bipolar transistors; interconnection model; parameter extraction method; parameter extraction technique; probe-pattern parasitics; self-consistent results; Atherosclerosis; Capacitance; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit interconnections; Integrated circuit measurements; Parameter extraction; Probes; Radio frequency; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160986

Filename

160986