DocumentCode :
3452916
Title :
Pb1-xMnxTe⟨In⟩ crystals microhardness investigation
Author :
Dyntu, M. ; Nikorich, A.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
383
Lastpage :
385
Abstract :
Microhardness and dislocation mobility in Pb1-xMnx Te⟨In⟩ crystals are investigated in dependence on composition x and temperature T. Manganese content increase is shown to lead to crystals hardening
Keywords :
IV-VI semiconductors; dislocation motion; indium; lead compounds; manganese compounds; microhardness; Pb1-xMnxTe<In> crystals; PbMnTe:In; dislocation mobility; microhardness; Chemicals; Crystals; Etching; Length measurement; Manganese; Q measurement; Tellurium; Temperature; Testing; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495041
Filename :
495041
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3452916
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