Title :
Mechanical properties of pure and doped indium phosphide single crystals
Author :
Boyarskaya, Yu.S. ; Grabko, D.Z. ; Medinskaya, M.I. ; Palistrant, N.A. ; Zhitaru, R.P.
Author_Institution :
Inst. of Appl. Phys., Kishinev, Moldova
Abstract :
The mechanical properties have been studied for the (001) and {111} planes of pure and doped InP single crystals. As was shown the anisotropy of these properties can be successfully investigated by using the sclerometer technique (scratch method) and acoustic emisson method. The influence of doping on microhardness has been revealed to be more pronounced at T~600 K than at room temperature
Keywords :
III-V semiconductors; indium compounds; microhardness; semiconductor doping; InP; acoustic emisson; anisotropy; doping; indium phosphide single crystals; mechanical properties; microhardness; sclerometer; scratch method; Acoustic measurements; Anisotropic magnetoresistance; Crystals; Doping; Etching; Indium phosphide; Mechanical factors; Physics; Temperature; Testing;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495042
