DocumentCode
3452932
Title
Optimizing Oxide Thickness for Digital Sub-threshold Operation
Author
Paul, Bipul C. ; Roy, Kaushik
Author_Institution
Toshiba America Research Inc., 2590 Orchard Parkway, San Jose, CA 95131
fYear
2006
fDate
26-28 June 2006
Firstpage
63
Lastpage
64
Abstract
This paper provides a guideline to optimize the oxide thickness of bulk MOSFET for digital sub-threshold operation. We show that minimum possible oxide thickness provided by the technology may not always result in minimum energy for digital sub-threshold operation. The optimum oxide thickness is also shown to be less sensitive to process variation.
Keywords
Circuit simulation; Doping profiles; Energy consumption; Frequency; Guidelines; Inverters; MOSFETs; Medical simulation; Portable computers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305119
Filename
4097536
Link To Document