Title :
Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs
Author :
Kao, H.L. ; Chin, Alvin ; Liao, C.C. ; McAlister, S.P. ; Kwo, J. ; Hong, M.
Author_Institution :
Nano Science Tech. Center, Dept. of Electronics Eng., Nat´´l Chiao-T. Univ., Univ. System of Taiwan, Hsinchu, Taiwan ROC
Abstract :
Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG = 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.
Keywords :
Coplanar waveguides; Equations; Fingers; Gain; MOSFETs; Microstrip; Noise measurement; Predictive models; Radio frequency; Roentgenium;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305120
