Title :
Size-quantized effect in Bi-Sn wires under tensile strain
Author :
Gitsu, D.V. ; Kondrya, E.P. ; Nikolaeva, A.A.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
An oscillating dependence of the resistance of thin (d<2 μm) cylindrical Bi-0.03 at.% Sn single crystals at 4.2 K on the tensile strain is observed, the dependence being determined by the sample diameter, temperature and impurity concentration. An analysis of the nonmonotonic behaviour of the resistance of thin samples is based an the idea of size-quantized spectrum of charge carriers and a noticeable variation of the exchange carrier concentration induced by impurities under a tensile strain
Keywords :
bismuth alloys; carrier density; deformation; piezoresistance; size effect; tin alloys; 4.2 K; Bi-Sn; Bi-Sn wires; charge carrier spectrum; cylindrical single crystals; exchange carrier concentration; impurities; resistance oscillations; size-quantized effect; tensile strain; Anisotropic magnetoresistance; Bismuth; Charge carriers; Coatings; Glass; Impurities; Lattices; Superconducting coils; Tensile strain; Wires;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495048
