DocumentCode
3453045
Title
Complete Quasi-Static Modeling of 130nm RF MOSFETs
Author
Jung, Young Ho ; Kang, In Man ; Shin, Hyungcheol
Author_Institution
School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
fYear
2006
fDate
26-28 June 2006
Firstpage
73
Lastpage
74
Abstract
A complete quasi-static modeling of RF MOSFETs including extrinsic parameters is proposed. All the parameters were obtained by linear regression and analytical equations without complex curve fitting. The extracted results were verified by using the parameters for MOSFET small signal model. Without any fitting or optimization step, the total modeling error of S-parameter was calculated to be only 1.46% up to 20 GHz.
Keywords
Abstracts; Capacitance; Data mining; Electrical resistance measurement; Electron mobility; Equivalent circuits; MOSFET circuits; Radio frequency; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305124
Filename
4097541
Link To Document