DocumentCode :
3453057
Title :
Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications
Author :
Wang, Xinlin ; Rim, Ken ; Shang, Huiling ; Koester, Steve ; Oldiges, Phil ; Ieong, Meikei
Author_Institution :
IBM Semiconductor Research and Development Center, Systems and Technology Group, Hopewell Junction, NY 12533. Email: xinlinwlus.ibm.com, Phone: (845)894-4740, Fax: (845)892-6483
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
75
Lastpage :
76
Keywords :
Carrier confinement; Degradation; Doping profiles; Germanium silicon alloys; MOSFETs; Niobium compounds; Scalability; Semiconductor device modeling; Silicon germanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305125
Filename :
4097542
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453057
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