DocumentCode :
3453070
Title :
MOS characteristics and a modified linear MOS resistor
Author :
Balasubramanian, Karthi ; Vineeth, K.V. ; Neeraj, A. ; Nikhil, K.M.
Author_Institution :
Dept. of Electron. & Commun. Eng., Amrita Sch. of Eng., Ettimadai, India
fYear :
2009
fDate :
14-15 Dec. 2009
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents an overview of MOS device characteristics and its use as voltage controlled resistors. A modified gate driving mechanism is proposed to enhance the MOS resistor properties. Generally, MOS resistors behave linearly only for a small value of Drain-to-Source voltage (VDS). With the new scheme, the non-linearity that arises out of its dependence on VDS is removed and the linearity property of the resistor is kept intact even for larger values of VDS.
Keywords :
MIS devices; resistors; MOS characteristics; MOS device characteristics; MOS resistor property; drain-to-source voltage; linear MOS resistor; linearity property; modified gate driving mechanism; voltage controlled resistors; Communication system control; FETs; MOS devices; MOSFET circuits; Mechanical factors; Resistors; Silicon; Substrates; Transconductance; Voltage control; Drain Curves; Linear MOS resistor; MOS;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Technical Postgraduates (TECHPOS), 2009 International Conference for
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-5223-1
Electronic_ISBN :
978-1-4244-5224-8
Type :
conf
DOI :
10.1109/TECHPOS.2009.5412109
Filename :
5412109
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453070
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