Title :
Photodetector with controlled photosensitivity in 1.1-1.6 μm spectral range
Author :
Snigur, Anatolii ; Brinzari, Vladimir ; Dorogan, Vlerian ; Korotchenkov, Gennady ; Savastru, Roxana
Author_Institution :
Tech. Univ. of Moldova, Kishinev, Moldova
Abstract :
The results on the elaboration of photodetectors based on InGaAsP-InGaAs-InP heterostructures with controlled photosensitivity in 1.1-1.6 μm spectral range are presented. The appearance of photosensitivity dependence on bias voltages and the causes of the threshold character of this dependence for such structures are discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodetectors; sensitivity; 1.1 to 1.6 micron; InGaAsP-InGaAs-InP; bias voltages; controlled photosensitivity; heterostructures; photodetectors; photosensitivity dependence; threshold character; Photodetectors; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495052
