DocumentCode :
3453095
Title :
Highly accurate proximity effect correction for 100 kV electron projection lithography
Author :
Koba, Fumihiro ; Yamashita, Hiroshi ; Arimoto, Hiroshi
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
106
Lastpage :
107
Keywords :
Absorption; Backscatter; Electrons; Exponential distribution; Lead compounds; Lithography; Page description languages; Proximity effect; Resists; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245746
Filename :
1459496
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453095
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