PbTe filamentary crystals for optoelectronic devices

Author

Banari, V. ; Gitsu, D. ; Kantser, V.

Author_Institution

Int. Lab. HTS SSE, Kishinev, Moldova

fYear

1995

fDate

11-14 Oct 1995

Firstpage

433

Lastpage

436

Abstract

The electrical and optical properties of two p-n junction configurations (transverse and coaxial) have been investigated utilizing PbTe filamentary crystals with the diameter 10-120 μm. The detectivity values D_λmax* up to 2·10¹⁰ cm·Hz^1/2W^-1 have been achieved for unbiased single filamentary detectors. The pulsed laser action was observed at T=4.2 K (λ=6.5 μm). The total internal reflection modes and the isotropic radiation pattern in the p-n junction plane were observed

Keywords

II-VI semiconductors; infrared detectors; lead compounds; optoelectronic devices; p-n junctions; 10 to 120 micron; 4.2 K; 6.5 micrometre; PbTe; coaxial configuration; detectivity values; electrical properties; filamentary crystals; isotropic radiation pattern; optical properties; optoelectronic devices; p-n junction configurations; p-n junction plane; pulsed laser action; total internal reflection modes; transverse configuration; unbiased single filamentary detectors; Capacitance; Coaxial components; Crystallization; Crystals; Diodes; Laboratories; Lead; Optoelectronic devices; P-n junctions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495053

Filename

495053