Title :
Enhancement and Depletion-mode GaAs N-MOSFETs with stacked HfO2/Y2O3 gate dielectric
Author :
Zhu, F. ; Koveshnikov, S. ; Ok, I. ; Kim, H.S. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Tsai, W. ; Lee, J.C.
Author_Institution :
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758. Phone: 512-471-1627, email: zhufeng@mail.utexas.edu
Keywords :
Annealing; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Interface states; MOSFET circuits; Passivation; Scattering; Transconductance;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305129
