Title :
Process development for the realization of thermally-reliable enhancement-mode InAlAs/InGaAs/InP HEMTs with excellent DC and RF performance
Author :
Zhao, Weifeng ; Jin, Niu ; Chen, Guang ; Kumar, Vipan ; Adesida, Ilesanmi
Author_Institution :
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, IL 61801
Keywords :
Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Metallization; Ohmic contacts; Radio frequency; Rapid thermal annealing;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305133
