DocumentCode :
3453227
Title :
AlGaN/GaN Field-Effect Surface Acoustic Wave Filters with >40-dB Isolation for Monolithic Integration with HEMTs
Author :
Shigekawa, Naoteru ; Nishimura, Kazumi ; Suemitsu, Tetsuya ; Yokoyama, Haruki ; Hohkawa, Kohji
Author_Institution :
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 JAPAN. Email: shige@aecl.ntt.co.jp Phone: +81-46-240-2865 Fax: +81-46-240-3261
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
95
Lastpage :
96
Keywords :
Acoustic waves; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Monolithic integrated circuits; SAW filters; Schottky barriers; Surface acoustic waves; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305135
Filename :
4097552
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453227
بازگشت