Title :
GaInAsP/InP distributed feedback lasers with periodic wire-like active regions fabricated by CH/sub 4//H/sub 2/ reactive-ion-etching
Author :
Nunoya, N. ; Nakamura, M. ; Kojima, T. ; Tanaka, S. ; Yasumoto, H. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We demonstrated high performance operation of 1.55 /spl mu/m wavelength GaInAsP-InP comprehensively strained MQW DFB lasers with completely etched through active layers that were fabricated by CH/sub 4//H/sub 2/-RIE and with OMVPE regrowth.
Keywords :
III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; sputter etching; vapour phase epitaxial growth; 1.55 mum; CH/sub 4//H/sub 2/ reactive-ion-etching; CH/sub 4//H/sub 2/-RIE; GaInAsP-InP; GaInAsP-InP comprehensively strained MQW DFB lasers; GaInAsP/InP distributed feedback lasers; OMVPE regrowth; active layers; completely etched; high performance operation; periodic wire-like active regions; Distributed feedback devices; Etching; Gratings; Indium phosphide; Laser feedback; Laser modes; Quantum well devices; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814780
